12月17日，我系兼职教授，香港理工大学工程学院院长徐星全（Charles Surya）教授应我系执行主任陆亚林教授邀请，来我系进行交流访问，并做了题为“Growth of Epitaxial Quality SnS on Layered Substrates”的学术报告会，材料系部分老师和学生听取了报告，并进行了讨论。
SnS是新型的半导体材料，具有合适的带隙、组成元素地球含量丰富、对环境友好等优点，Charles教授在报告中展示了如何利用一些层状材料衬底如石墨烯、云母等，通过范德瓦耳斯外延方式得到高质量的SnS薄膜，这将有可能获得高效低成本薄膜太阳能电池。
Charles Surya教授简介：
Professor Surya received his PhD in electrical engineering in 1987 from the University of Rochester, New York. From 1987 to 1994 he was with the Electrical and Computer Engineering Department of Northeastern University, Boston. He joined The Electronic and Information Engineering Department of The Hong Kong Polytechnic University in 1994. Since 2002 he served as a full professor and the associate head of the department.
Professor Surya is the leader of the Thin Film Optoelectronics Research Group. Since joining The Hong Kong Polytechnic University, he has established a state-of-the-art Molecular Beam Epitaxy (MBE) and a Metalorganic Chemical Vapour Deposition (MOCVD) facility for the growth of GaN based devices. Professor Surya has published widely in the field of semiconductor optoelectronic and electronic devices and has established himself as an international authority in the field of low-frequency excess noise in semiconductor devices. In 1997, Prof. Surya was invited to become a member of the International Advisory Committee for the International Conference on Noise in Physical Systems and 1/f fluctuations (ICNF) in recognition of my contribution in the field. Between 2000 and 2002 Prof. Surya served in the editorial board of Fluctuations and Noise Letters. His present research effort includes:
- Development and commercialization of GaN-based UV detectors;
- Development of GaN-based high electron mobility transistors; and
- Development of GaN-based nanodot light emitters.
